3SK324 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

3SK324
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
6
Gate1 to source breakdown voltage V_(BR)G1SS ±6
Gate2 to source breakdown voltage V_(BR)G2SS ±6
Gate1 to source cutoff current
I_G1SS
—
Gate2 to source cutoff current
I_G2SS
—
Gate1 to source cutoff voltage
V_G1S(off)
0
Gate2 to source cutoff voltage
V_G2S(off)
0.3
Forward transfer admittance
|y_fs|
30
Power gain
Noise figure
PG
20
NF
—
(Ta = 25°C)
Typ Max Unit
Test Conditions
—
—
V I_D = 200 µA, V_G1S = V_G2S = 0
—
—
V I_G1 = ±10 µA, V_G2S = V_DS = 0
—
—
V I_G2 = ±10 µA, V_G1S = V_DS = 0
—
±100
nA V_G1S = ±5 V, V_G2S = V_DS = 0
—
±100
nA V_G2S = ±5 V, V_G1S = V_DS = 0
0.5
1
V V_DS = 5 V, V_G2S = 3V, I_D = 100 µA
0.7
1.1
V V_DS = 5 V, V_G1S = 3 V, I_D = 100 µA
42
—
mS V_DS = 3.5 V, I_D = 10 mA,
V_G2S = 3 V, f = 1 kHz
24
—
dB V_DS = 3.5 V, I_D = 10 mA,
1.0
1.6
dB ^VG2S ^{= 3 V, f = 900 MHz}
900MHz PG, NF Test Circuit
V_G1 V_G2
C4
C5
V_D
C6
Input (50 Ω)
R1
R2
C3
G2
G1
L1 L2
R3
RFC
D
L3 L4
S
Output (50 Ω)
C1
C2
L1:
10
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10 pF MAX)
Disk Capacitor (1000 pF)
Air Capacitor (1000 pF)
47 kΩ
47 kΩ
4.7 kΩ
L2:
26
21
L3:
29
L4:
18
(φ1 mm Copper wire)
Unit : mm
RFC : φ1mm Copper wire with enamel 4 turns inside dia 6 mm
Rev.1.00, May 18,2005, page 2 of 7