3SK324 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

3SK324
Si Nch Dual Gate MOS FET
UHF RF LOW NOISE Amplifier
Features
• Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz)
• High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)
• Capable low voltage operation; +B = 3.5 V
• High Endurance Voltage; V_DS = 6 V
Outline
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1. Marking is “UG-”.
1
4
REJ03G0532-0100
Rev.1.00
May 18, 2005
1. Source
2. Gate1
3. Gate2
4. Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DS
6
Gate1 to source voltage
+6
V_G1S
–6
Gate2 to source voltage
+6
V_G2S
–6
Drain current
I_D
20
Channel power dissipation
Pch^*2
250
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 2. Value on the glass epoxy board (50 mm × 40 mm × 1 mm).
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.1.00, May 18,2005, page 1 of 7