3SK295 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK295
Absolute Maximum Ratings
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
12
±8
±8
25
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSX 12
Gate 1 to source breakdown voltage V_(BR)G1SS ±8
Gate 2 to source breakdown voltage V_{(BR) G2SS} ±8
Gate 1 cutoff current
I_G1SS
—
Gate 2 cutoff current
I_G2SS
—
Drain current
I_DS(on)
0.5
Gate 1 to source cutoff voltage
V_G1S(off)
–0.5
Gate 2 to source cutoff voltage
V_G2S(off)
0
Forward transfer admittance
|y_fs|
16
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Ciss
1.2
Coss
0.6
Crss
—
PG
16
NF
—
Typ
—
—
—
—
—
—
—
—
20.8
1.5
0.9
0.01
19.5
2.0
Max
—
—
—
±100
±100
10
+0.5
+1.0
—
2.2
1.2
0.03
—
3
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
(Ta = 25°C)
Test conditions
I_D = 200 µA , V_G1S = –3 V,
V_G2S = –3 V
I_G1 = ±10 µA, V_G2S = V_DS = 0
I_G2 = ±10 µA, V_G1S = V_DS = 0
V_G1S = ±6 V, V_G2S = V_DS = 0
V_G2S = ±6 V, V_G1S = V_DS = 0
V_DS = 6 V, V_G1S = 0.5 V,
V_G2S = 3 V
V_DS = 10 V, V_G2S = 3 V,
I_D = 100 µA
V_DS = 10 V, V_G1S = 3 V,
I_D = 100 µA
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 kHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 MHz
V_DS = 4 V, V_G2S = 3 V,
I_D = 10 mA, f = 900 MHz
Rev.3.00, Aug 10.2005, page 2 of 6