3SK295 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK295
Silicon N-Channel Dual Gate MOS FET
Application
• UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
Note: Marking is “ZQ–”
3
1
4
REJ03G0814-0300
(Previous ADE-208-387A)
Rev.3.00
Aug. 10, 2005
1. Source
2. Gate1
3. Gate2
4. Drain
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00, Aug 10.2005, page 1 of 6