2SK3391 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET UHF Power Amplifier

2SK3391
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit Test Conditions
Zero gate voltage drain
I_DSS
current
—
—
10
µA
V_DS = 13.7 V, V_GS = 0
Gate to source leak current I_GSS
—
—
±5
µA
V_GS = ±10 V, V_DS = 0
Gate to source cutoff voltage V_GS(off)
2.3
—
3.1
V
I_D = 1 mA, V_DS = 13.7 V
Input capacitance
Ciss
—
10
—
pF
V_GS = 5 V, V_DS = 0, f = 1 MHz
Output capacitance
Coss
—
3.5
—
pF
V_DS = 13.7 V, V_GS = 0, f = 1 MHz
Output Power
Pout
1.6
—
—
W
V_DS = 13.7 V, I_DO = 0.15 A
f = 836 MHz, Pin = 25.1 mW
Added Efficiency
ηadd
58
—
—
%
V_DS = 13.7 V, I_DO = 0.15 A
f = 836 MHz, Pin = 25.1 mW
Main Characteristics
Maximum Channel Power
Dissipation Curve
8
6
4
2
0
50
100
150
200
Case Temperature Tc (°C)
Typical Transfer Characteristics
0.8
Tc = 75°C
25°C
0.6
- 25°C
0.4
0.2
0.0
2
V_DS = 13.7 V
Pulse Test
3
4
5
6
7
Gate to Source Voltage V_GS (V)
Typical Output Characteristics
1.5
10 V
8V
7V
1
6V
0.5
5V
V_GS = 4 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance vs.
Drain Current
1
Tc = - 25°C
0.3
0.1
25°C
0.03
75°C
0.01
0.003
0.001
0.001 0.003
0.01 0.03
V_DS = 13.7 V
Pulse Test
0.1 0.3 1
Drain Current I_D (A)
Rev.2.00, Apr.14.2004, page 2 of 4