2SK3391 Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET UHF Power Amplifier

2SK3391
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz)
• Compact package capable of surface mounting
Outline
UPAK
REJ03G0209-0200Z
(Previous ADE-208-847 (Z))
Rev.2.00
Apr.14.2004
D
1
3
2
3
1
G
2,4
S
1. Gate
4
2. Source
3. Drain
4. Source
Note: Marking is “JX“.
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW < 1sec, Tch < 150°C
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
Pch ^Note2
Tch
Tstg
Ratings
17
±10
0.3
0.75
5
150
–45 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Rev.2.00, Apr.14.2004, page 1 of 4