2SK1151_11 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown 2SK1151 V(BR)DSS 450
—
—
V I_D = 10 mA, V_GS = 0
voltage
2SK1152
500
Gate to source breakdown voltage
V_(BR)GSS
±30
—
—
Gate to source leak current
I_GSS
—
—
±10
Zero gate voltage drain 2SK1151
I_DSS
—
current
2SK1152
—
100
Gate to source cutoff voltage
V_GS(off)
2.0
—
3.0
Static drain to source on 2SK1151 RDS(on)
—
state resistance
2SK1152
—
3.5
5.5
4.0
6.0
Forward transfer admittance
|y_fs|
0.6
1.1
—
Input capacitance
Ciss
—
160
—
Output capacitance
Coss
—
45
—
V I_G = ±100 μA, V_DS = 0
μA V_GS = ±25 V, V_DS = 0
μA V_DS = 360 V, V_GS = 0
V_DS = 400 V, V_GS = 0
V I_D = 1 mA, V_DS = 10 V
Ω I_D = 1 A, V_GS = 10 V *³
S
I_D = 1 A, V_DS = 20 V *³
pF V_DS = 10 V, V_GS = 0,
pF ^{f = 1 MHz}
Reverse transfer capacitance
Crss
—
5
—
pF
Turn-on delay time
t_d(on)
—
5
—
Rise time
t_r
—
10
—
Turn-off delay time
t_d(off)
—
20
—
Fall time
t_f
—
10
—
Body to drain diode forward voltage
V_DF
—
1.0
—
Body to drain diode reverse recovery
t_rr
—
220
—
time
Note: 3. Pulse test
ns I_D = 1 A, V_GS = 10 V,
ns ^RL ^{= 30 Ω}
ns
ns
V I_F = 1.5 A, V_GS = 0
ns I_F = 1.5 A, V_GS = 0,
di_F/dt = 100 A/μs
R07DS0397EJ0300 Rev.3.00
May 16, 2011
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