2SK1151_11 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1151(L), 2SK1151(S),
2SK1152(L), 2SK1152(S)
Silicon N Channel MOS FET
Preliminary Datasheet
R07DS0397EJ0300
(Previous: REJ03G0907-0200)
Rev.3.00
May 16, 2011
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
4
G
123
123
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1151
2SK1152
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse)*¹
I_DR
Pch*²
Tch
Tstg
Ratings
450
500
±30
1.5
6
1.5
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0397EJ0300 Rev.3.00
May 16, 2011
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