PD17P246_15 Datasheet, PDF (17/34 Pages) Renesas Technology Corp – PD17P246_15 FOR SMALL GENERAL-PURPOSE INFRARED REMOTE CONTROLLER

µPD17P246
3.2 Program Memory Writing Procedure
The program memory is written at high speed in the following procedure.
(1) Pull down the pins not used to GND via a resistor. Keep the CLK pin low.
(2) Supply 5 V to the VDD pin. Keep the VPP pin low.
(3) Supply 5 V to the VPP pin after waiting for 10 µs.
(4) Set the program memory address 0 clear mode by using the mode setting pins.
(5) Supply +6 V to VDD and +12.5 V to VPP.
(6) Set the program inhibit mode.
(7) Write data to the program memory in the 1-ms write mode.
(8) Set the program inhibit mode.
(9) Set the verify mode. If the data have been written to the program memory, proceed to (10). If not, repeat
steps (7) through (9).
(10) Additional writing of (number of times of writing in (7) through (9): X) × 1 ms.
(11) Set the program inhibit mode.
(12) Input a pulse to the CLK pin four times to update the program memory address (+1).
(13) Repeat steps (7) through (12) up to the last address.
(14) Set the 0 clear mode of the program memory address.
(15) Change the voltages on the VDD and VPP pins to 5 V.
(16) Turn off power.
The following figure illustrates steps (2) through (12) above.
Repeated X time
Reset
Write
Verify
VPP
VPP
VDD
GND
VDD+1
VDD
VDD
GND
CLK
Additional write
Address
increment
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D0 to D7
Data input
Data output
Data input
MD0
MD1
MD2
MD3
Data Sheet U15215EJ1V0DS
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