R1EX24008ASAS0I_15 Datasheet, PDF (16/17 Pages) Renesas Technology Corp – Two-wire serial interface 8k EEPROM (1024-word x 8-bit)

Revision History
R1EX24008ASAS0I/R1EX24008ATAS0I Data Sheet
Rev.
0.01
0.02
Date
Dec 26, 2007
Jan. 09, 2009
1.00
Nov. 08, 2013
Page
—
P1
P4
P5
—
P2
P3
P14
Description
Initial issue
Summary
Features
Endurance cycles change 10⁶ cycles to 1,000k cycles @25°C.
Data retentions years change 10 years to 100 years @25°C.
Memory cell characteristics is described.
AC characteristics
Erase/Write endurance is deleted.
Notes1. change Not 100% tested.
Notes3 deleted.
Deletion of preliminary
Addition Voltage detector in Block Diagram.
Addition DC characteristics
I_SB =0.5μA(Typ)@3.3V, I_CC1=0.2mA(Typ)@3.3V, , I_CC2=1.3mA(Typ)@3.3V
Change Note
VCC turn on speed should be longer than 10 μs. to
VCC turn on rate should be slower than 2 μs/V.
Addition these items for Notes
(Power Source Noise Countermeasures) ,
(Device Address Input, Write Protect input)
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