R1EX24512ASAS0A Datasheet, PDF (13/23 Pages) Renesas Technology Corp – Two-wire serial interface 512k EEPROM (64-kword × 8-bit)

R1EX24512ASAS0A
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 128 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for
inputting the more write data. The page write is initiated by a start condition, device address word,
memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the
page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop
condition. The a0 to a6 address bits are automatically incremented upon receiving write data (Dn+1).
The EEPROM can continue to receive write data up to 128 bytes. If the a0 to a6 address bits reaches the
last address of the page, the a0 to a6 address bits will roll over to the first address of the same page and
previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving
write data and enters internally-timed write cycle.
Page Write Operation
WP
Device
address
512k ^{1 0 1 0 0}
Start
1st Memory
address (n)
W
ACK
R/W
Note: 1. Don't care bit
2nd Memory
address (n)
Write data (n)
ACK
ACK
ACK _Stop
REJ03C0325-0100 Rev.1.00 May. 16, 2008
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