PA2794AGR_15 Datasheet, PDF (11/14 Pages) Renesas Technology Corp – SWITCHING N- AND P-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-50
-40
−10 V
-30
VGS = −4.5 V
-20
-10
-0
-0
Pulsed
-0.5
-1
-1.5
-2
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2
-1
VDS = −10 V
ID = −1 mA
-0
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
55 Pulsed
50
45
40
VGS = −4.5 V
35
30
−10 V
25
20
15
10
5
0
-1
-10
-100
ID - Drain Current - A
μ PA2794AGR
FORWARD TRANSFER CHARACTERISTICS
-100
-10
Tch = −55°C
−25°C
-1
-0.1
-0.01
-0.001
-0
-1
-2
25°C
75°C
125°C
150°C
VDS = −10 V
Pulsed
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
10
25°C
75°C
1
125°C
150°C
VDS = −10 V
Pulsed
0.1
-0.1
-1
-10
-100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
ID = −2.8 A
50
Pulsed
40
30
20
10
0
-0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
Data Sheet G19922EJ1V0DS
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