PA2794AGR_15 Datasheet, PDF (10/14 Pages) Renesas Technology Corp – SWITCHING N- AND P-CHANNEL POWER MOS FET

μ PA2794AGR
(2) P-channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
2.5
2 units
2
Mounted on ceramic
substrate of
2000 mm² x 1.6 mm
1.5 ^{1 unit}
1
0.5
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
ID(pulse)
-10
RDS(on) Limited
(VGS = −10 V)
ID(DC)
-1
-0.1
Power _{Dissipat ion Limit ed}
Secondary Breakdown Limited
Single pulse
-0.01
Mounted on ceramic substrate of
2000 mm² x 1.6 mm
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Mounted on ceramic substrate of 2000 mm² x 1.6 mm
Rth(ch-A) = 73.5°C/Wi
Rth(ch-A) = 62.5°C/Wi
10
1
Rth(ch-A) (1 unit)
Rth(ch-A) (2 units)
0.1
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
8
Data Sheet G19922EJ1V0DS