R32C152_15 Datasheet, PDF (101/136 Pages) Renesas Technology Corp – RENESAS MCU

R32C/152 Group
5. Electrical Characteristics
Table 5.9
Electrical Characteristics of E²dataFlash
(V_CC = 3.0 to 5.5 V, V_SS = 0 V, and T_a = T_opr, unless otherwise noted)
Symbol
Characteristic
Value
Min. Typ. Max.
Unit
— Program/erase cycles ⁽¹⁾
100000
Cycles
— Word program time
100 2000 µs
—
t_PS
—
Block erasure time
32 byte block
Flash memory circuit start-up stabilization time
Data retention ⁽²⁾
T_a = 55°C ^{(3, 4)}
15
200
ms
35
50
µs
20
Years
Notes:
1. Program/erase definition
This value represents the number of erasure per block.
When the number of program/erase cycles is n, each block can be erased n times.
For example, if a word write is performed in 16 different addresses in a block and then the block is
erased, this is counted as a single program/erase operation. However, the same address cannot
be written to more than once per erasure (overwrite disabled).
2. Data retention includes periods when no supply voltage is applied and no clock is provided.
3. This data retention includes 3000 hours in T_a = 125°C and 7000 hours in T_a = 85°C.
4. Contact a Renesas Electronics sales office for data retention times other than the above condition.
Table 5.10 Power Supply Circuit Timing Characteristics
(V_CC = 3.0 to 5.5 V, V_SS = 0 V, and T_a = T_opr, unless otherwise noted)
Symbol
Characteristic
Measurement
Condition
Min.
Value
Typ. Max.
Unit
t_d(P-R) Internal power supply start-up stabilization
time after the main power supply is turned on
2 ms
t _d(P-R)
Internal power supply start-up
stabilization time after the main
power supply is turned on
Recommended
V_CC
operating voltage
Supply voltage for
internal logic
PLL oscillator-
output waveform
Figure 5.3 Power Supply Circuit Timing
t _d(P-R)
R01DS0073EJ0120 Rev.1.20
Aug 07, 2013
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