PD168302_15 Datasheet, PDF (10/14 Pages) Renesas Technology Corp – MONOLITHIC 2CH H-BRIDGE DRIVER

µPD168302
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = 25°C, VDD = 5 V, VM = 5.5 V)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
VDD current at standby
VDD current at operating
High-level Input current
IDD(STB)
IDD(ACT)
IIH
/STB = L
VIN = VDD
1.0
µA
1.0
mA
100
µA
Low-level Input current
IIL
VIN = 0 V
−1.0
µA
Input pull-down resistance
RIND
50
200
kΩ
High-level Input voltage
VIH
4.0 V ≤ VDD ≤ 5.5 V
0.7 x VDD
V
Low-level Input voltage
VIL
4.0 V ≤ VDD ≤ 5.5 V
0.3 x VDD
V
On resistance H-Bridge
Ron
IM = 0.3 A, Sum of upper and lower
1.0
2.0
Ω
Output Leak current
IM(off)
Per VM pin
1.0
µA
All control-pin = L
(VM = Recommenred range MAX.)
low-voltage detected voltage
VDDS
1.7
2.5
V
turn-ON time at charge-pump tONC
C1 = C2 = C3 = 0.01 µF
1.0
ms
Output turn-ON time
ton
IM = 0.3 A, refer to Figure 1, 2
0.1
5.0
µs
Output turn-OFF time
toff
0.1
5.0
µs
Figure 1. Charge-pump circuit operating wave
STB
VG
50%
tONC
90%
VM + 3.5 V (reference)
Figure 2. Switching Wave
IN
50%
ton
50%
toff
IM
50%
50%
8
Data Sheet S16402EJ1V0DS