UPD48576118F1 Datasheet, PDF (1/52 Pages) Renesas Technology Corp – 576M-BIT Low Latency DRAM

µPD48576118F1
Datasheet
576M-BIT Low Latency DRAM
Separate I/O
R10DS0257EJ0101
Rev. 1.01
Jan. 15, 2016
Description
The µPD48576118F1 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with
advanced CMOS technology using one-transistor memory cell.
The µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers
controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are
suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit
configuration.
Specification
• Density: 576M bit
• Organization
- Separate I/O: 4M words x 18 bits x 8 banks
• Operating frequency: 533 / 400 / 300 MHz
• Interface: HSTL I/O
• Package: 144-pin FBGA
- Package size: 18.5 x 11
- Lead free
• Power supply
- 2.5 V VEXT
- 1.8 V VDD
- 1.5 V or 1.8 V VDDQ
• Refresh command
- Auto Refresh
- 16K cycle / 32 ms for each bank
- 128K cycle / 32 ms for total
• Operating case temperature : Tc = 0 to 95°C
Features
• SRAM-type interface
• Double-data-rate architecture
• PLL circuitry
• Cycle time:
1.875 ns @ tRC = 15 ns
2.5 ns @ tRC = 15 ns
2.5 ns @ tRC = 20 ns
3.3 ns @ tRC = 20 ns
• Non-multiplexed addresses
• Multiplexing option is available.
• Data mask for WRITE commands
• Differential input clocks (CK and CK#)
• Differential input data clocks (DK and DK#)
• Data valid signal (QVLD)
• Programmable burst length: 2 / 4 / 8 (x18)
• User programmable impedance output (25 Ω - 60 Ω)
• JTAG boundary scan
R10DS0257EJ0101 Rev. 1.01
Jan. 15, 2016
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