UPA2736GR_16 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P-channel MOSFET

Data Sheet
μPA2736GR
P-channel MOSFET
–30 V, –14 A, 7.0 mΩ
R07DS1320EJ0100
Rev.1.00
Jan 25, 2016
Description
The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• V_DSS = −30 V (T_A = 25°C)
• Low on-state resistance
⎯ R_DS(on) = 7.0 mΩ MAX. (V_GS = −10 V, I_D = −14 A)
• 4.5 V Gate-drive available
• Small and surface mount package (SOP-8)
• Pb-free and Halogen free
Ordering Information
SOP-8
Part No.
μ PA2736GR-E1-AX
μ PA2736GR-E2-AX
LEAD PLATING
Ni / Pd / Au
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.085 g TYP.
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^∗1
Total Power Dissipation ^∗2
Total Power Dissipation (PW = 10 sec) ^∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ^∗3
Single Avalanche Energy ^∗3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
T_ch
T_stg
I_AS
E_AS
Ratings
−30
m20
m14
m140
1.1
2.5
150
−55 to +150
14
19.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ^∗2
R_th(ch-A)
114
°C/W
Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗_{2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt}
∗_{3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH}
R07DS1320EJ0100 Rev.1.00
Jan 25, 2016
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