RMLV0816BGBG_15 Datasheet, PDF (1/15 Pages) Renesas Technology Corp – 8Mb Advanced LPSRAM (512k word × 16bit)

RMLV0816BGBG - 4S2
8Mb Advanced LPSRAM (512k word × 16bit)
R10DS0229EJ0100
Rev.1.00
2014.11.28
Description
The RMLV0816BGBG is a family of 8-Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0816BGBG has realized higher density, higher
performance and low power consumption. The RMLV0816BGBG offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 48-ball fine pitch ball grid array.
Features
 Single 3V supply: 2.4V to 3.6V
 Access time:
── Power supply voltage from 2.7V to 3.6V: 45ns (max.)
── Power supply voltage from 2.4V to 2.7V: 55ns (max.)
 Current consumption:
── Standby: 0.6µA (typ.)
 Equal access and cycle times
 Common data input and output
── Three state output
 Directly TTL compatible
── All inputs and outputs
 Battery backup operation
Part Name Information
Part Name
Power supply
RMLV0816BGBG-4S2
2.7V to 3.6V
2.4V to 2.7V
Access time
45 ns
55 ns
Temperature
Range
-40 ~ +85°C
Package
48-ball FBGA with 0.75mm ball pitch
R10DS0229EJ0100 Rev.1.00
2014.11.28
Page 1 of 13