RMHE41A184AGBG Datasheet, PDF (1/52 Pages) Renesas Technology Corp – 1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 4

RMHE41A184AGBG
RMHE41A364AGBG
1.1G-BIT Low Latency DRAM-III
Common I/O Burst Length of 4
Datasheet
R10DS0250EJ0100
Rev. 1.00
Jun. 19, 2015
Description
The RMHE41A184AGBG is a 67,108,864-word by 18-bit and the RMHE41A364AGBG is a 33,554,432-word by 36-bit
synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using DRAM memory cell.
The Low Latency DRAM-III chip is a 1.1Gb DRAM capable of a sustained throughput of approximately 57.6 Gbps for
burst length of 4 (approximately 51.2 Gbps for applications implementing error correction), excluding refresh overhead
and data bus turn-around
With a bus speed of 800 MHz, a burst length of 4, and a tRC of 13.75 ns, the Low Latency DRAM-III chip is capable of
achieving this rate when accesses to at least 6 banks of memory are overlapped.
These products are packaged in 180-pin FCBGA.
Specification
• Density: 1.1Gbit
• Organization: 8M words x 18 bits x 8 banks
4M words x 36 bits x 8 banks
• Operating frequency
800 MHz (MAX.) @ tRC=13.75 ns
• tRC
13.75 ns tRC (and 13.75 ns tRFC)
• Burst length: 4
• Address bus
2 cycle DDR address
• Package
180-pin FCBGA (Ball Array: 1 mm x 1 mm Pitch)
Package size: 18.5 mm x 14 mm
ROHS 6/6 compliance
• Power supply
- 2.5 V VEXT
- 1.5 V VDD
- 1.0 V or 1.2 V VDDQ
• Refresh command
- Auto Refresh : 16384 cycles / 2 ms for each bank
- Overlapped Refresh with REF# pin
• Operating case temperature: 0 to 95 °C
R10DS0250EJ0100 Rev. 1.00
Jun. 19, 2015
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