RJK1054DPB Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK1054DPB
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0093EJ0200
(Previous: REJ03G1886-0100)
Rev.2.00
Aug 17, 2010
Features
 High speed switching
 Low drive current
 Low on-resistance
 R_DS(on) = 17 m typ. (at V_GS = 10 V)
Outline
 Pb-free
 Halogen-free
 High density mounting
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 ²³⁴
5
D
4
1, 2, 3 Source
G
4
Gate
5
Drain
SSS
123
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at L=10uH, Tch = 25C, Rg  50 
3. Tc = 25C
Ratings
100
20
20
80
20
20
4.0
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0093EJ0200 Rev.2.00
Aug 17, 2010
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