RJK0354DSP_10 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0354DSP
Silicon N Channel Power MOS FET
Power Switching
Features
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 5.4 m typ. (at V_GS = 10 V)
 Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
Preliminary Datasheet
REJ03G1661-0200
Rev.2.00
Apr 05, 2010
5678
DDDD
SSS
123
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
30
Gate to source voltage
V_GSS
±20
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
16
128
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
ch-a ^Note3
16
15
22.5
2.0
62.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
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