R1QGA4436RBG_15 Datasheet, PDF (1/30 Pages) Renesas Technology Corp – 144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.0 Cycle Read latency)

Datasheet
R1QGA4436RBG,R1QGA4418RBG
144-Mbit QDR™II+ SRAM 4-word Burst
Architecture (2.0 Cycle Read latency)
R10DS0139EJ0201
Rev.2.01
Aug 01, 2014
Description
The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit
synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are
controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are
suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit
configuration. These products are packaged in 165-pin plastic FBGA package.
Features
„ Power Supply
z 1.8 V for core (V_DD), 1.4 V to V_DD for I/O (V_DDQ)
„ Clock
z Fast clock cycle time for high bandwidth
z Two input clocks (K and /K) for precise DDR timing at clock rising edges only
z Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
z Clock-stop capability with μs restart
„ I/O
z Separate independent read and write data ports with concurrent transactions
z 100% bus utilization DDR read and write operation
z HSTL I/O
z User programmable output impedance
z PLL circuitry for wide output data valid window and future frequency scaling
z Data valid pin (QVLD) to indicate valid data on the output
„ Function
z Four-tick burst for reduced address frequency
z Internally self-timed write control
z Simple control logic for easy depth expansion
z JTAG 1149.1 compatible test access port
„ Package
z 165 FBGA package (15 x 17 x 1.4 mm)
R10DS0139EJ0201 Rev.2.01
Aug 01, 2014
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