R1Q4A3636B Datasheet, PDF (1/26 Pages) Renesas Technology Corp – 36-Mbit DDRII SRAM 2-word Burst

R1Q4A3636B/R1Q4A3618B
36-Mbit DDRII SRAM
2-word Burst
REJ03C0343-0003
Preliminary
Rev. 0.03
Apr.11, 2008
Description
The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double
data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It
integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock
pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which
require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are
packaged in 165-pin plastic FBGA package.
Features
• 1.8 V ± 0.1 V power supply for core (V_DD)
• 1.4 V to V_DD power supply for I/O (V_DDQ)
• DLL circuitry for wide output data valid window and future frequency scaling
• Pipelined double data rate operation
• Common data input/output bus
• Two-tick burst for low DDR transaction size
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to
receiving device
• Internally self-timed write control
• Clock-stop capability with µs restart
• User programmable impedance output
• Fast clock cycle time: 3.3 ns (300 MHz)/4.0 ns (250 MHz)/ 5.0 ns (200 MHz)/6.0 ns (167 MHz)
• Simple control logic for easy depth expansion
• JTAG boundary scan
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology's Sales Dept. regarding specifications.
REJ03C0343-0003 Rev.0.03 Apr.11,2008
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