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NP55N04SLG Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP55N04SLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0242EJ0100
Rev.1.00
Feb 23, 2011
Description
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Channel temperature 175 degree rating
⢠Super low on-state resistance
⯠RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
⯠RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A)
⯠RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)
⢠Low input capacitance
⢠Gate to Source ESD protection diode built-in
Ordering Information
Part No.
LEAD PLATING
PACKING
NP55N04SLG-E1-AY â1
Pure Sn (Tin)
Tape 2500 p/reel
NP55N04SLG-E2-AY â1
Note: â1. Pb-free (This product does not contain Pb in external electrode.)
Package
TO-252 (MP-3ZK)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current â2
Repetitive Avalanche Energy â2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±55
±220
77
1.2
175
â55 to +175
30
90
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance â2
Rth(ch-C)
Rth(ch-A)
1.95
°C/W
125
°C/W
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Starting Tch ⤠150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 â 0 V
R07DS0242EJ0100 Rev.1.00
Feb 23, 2011
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