M66288FP Datasheet, PDF (1/24 Pages) Renesas Technology Corp – 262144-word x 8-bit x 3-FIFO MEMORY

M66288FP
262144-word x 8-bit x 3-FIFO MEMORY
REJ03F0156-0310
Rev. 03.10
Apr.4.2008
Description
The M66288FP is a high-speed field memory with three FIFO (First In First Out) memories of 262144-word x 8-bit
configuration (2M-bit), which uses high-performance silicon gate CMOS process technology. One of three FIFO memories
consists of two FIFO memories of 262144-word x 4-bit (1M-bit). Eight types of operation can be performed by mode
settings.
Features
z Memory configuration Total memory capacity is 6M-bit (static memory).
Eight types of memory configurations can be selected.
z High - speed cycle
12.5 ns (Min.) fmax 80MHz
z High - speed access
9.0 ns (Max.)
z Output hold
2.0 ns (Min.)
z Supply voltage
Internal = 1.8 V ± 0.18 V, I/O = 3.3 V ± 0.3 V
z Variable length delay bit
z Eight modes can be selected
z Write and Read function can be operated completely independently and asynchronously
z Output type
3 state output
z Package
100pin 14x14mm body LQFP (PLQP0100KB-A, 100P6Q-A)
Application
W-CDMA base station, Digital PPC, Digital television, VTR and so on.
Pin Configuration (Top view)
VccIO
76
GND
77
Vcc18
78
QA0
79
QA1
80
QA2
81
QA3
82
QA4
83
QA5
84
QA6
85
QA7
86
GND
87
VccIO
88
DA0
89
DA1
90
DA2
91
DA3
92
DA4
93
DA5
94
DA6
95
DA7
96
GND
97
Vcc18
98
TEST1
99
TEST2
100
M66288FP
50
GND
49
Vcc18
48
GND
47
VccIO
46
QC7
45
QC6
44
QC5
43
QC4
42
QC3
41
QC2
40
QC1
39
QC0
38
GND
37
VccIO
36
DC7
35
DC6
34
DC5
33
DC4
32
DC3
31
DC2
30
DC1
29
DC0
28
GND
27
Vcc18
26
GND
REJ03F0156-0310 Rev.3.10 Apr.04.2008
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