M66280FP Datasheet, PDF (1/14 Pages) Mitsubishi Electric Semiconductor – 5120 x 8-BIT LINE MEMORY

M66280FP
5120 × 8-Bit Line Memory
REJ03F0253-0200
Rev.2.00
Sep 14, 2007
Description
The M66280FP is high speed line memory that uses high performance silicon gate CMOS process technology and
adopts the FIFO (First In First Out) structure consisting of 5120 words × 8 bits.
The M66280FP, performing reading and writing operations at different cycles independently and asynchronously, is
optimal for buffer memory to be used between equipment of different data processing speeds.
Features
• Memory configuration:
5120 words × 8 bits (dynamic memory)
• High speed cycle:
25 ns (Min)
• High speed access:
18 ns (Max)
• Output hold:
3 ns (Min)
• Reading and writing operations can be completely carried out independently and asynchronously
• Variable length delay bit
• Input/output:
TTL direct connection allowable
• Output:
3 states
Application
Digital copying machine, laser beam printer, high speed facsimile, etc.
Block Diagram
Data inputs
D0 to D7
13 14 15 16 21 22 23 24
Data outputs
Q0 to Q7
1 2 3 4 9 10 11 12
Input buffer
Output buffer
WEB ²⁰
Write
enable input
WRESB ¹⁹
Write
reset input
WCK ¹⁷
Write
clock input
V_CC ¹⁸
Memory array
5120 × 8 bits
5 REB
Read
enable input
6 RRESB
Read
reset input
8 RCK
Read
clock input
7 GND
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
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