M5M29KB Datasheet, PDF (1/32 Pages) Renesas Technology Corp – CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

Renesas LSIs
M5M29KB/T331AVP
33,554,432-BIT (4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The M5M29KB/T331AVP are 3.3V-only high speed
33,554,432-bit CMOS boot block FLASH Memories with
alternating BGO(Back Ground Operation) feature. The BGO
feature of the device allows Program or Erase operations to be
performed in one bank while the device simultaneously allows
Read operations to be performed on the other bank.
M5M29KB/T331AVP provides for Software Lock Release
function. Usually, all memory blocks are locked and can not
be programmed or erased, when WP# is low. Using Software
Lock Release function, program or erase operation can be
executed.
FEATURES
This BGO feature is suitable for mobile and personal
computing, and communication products.
Access time
Random
Page
70ns (Max.)
25ns(Max.)
The M5M29KB/T331AVP are fabricated by CMOS technology ^{Supply voltage}
for the peripheral circuit and DINOR IV(Divided bit-line NOR IV) Ambient temperature
VCC= 3.0 ~ 3.6V
Ta=-40 ~ 85 °C
architecture for the memory cell, and are available in 48pin
TSOP(I) for lead free use.
Package
48pin TSOP(Type-I), Lead pitch 0.5mm
Outer-lead finishing : Sn-Cu
APPLICATION
Digital Cellar Phone, Telecommunication,
PDA, Car Navigation System, Video Game Machine
PIN CONFIGURATION (TOP VIEW)
VCC
GND
A0-A21
DQ0-DQ15
CE#
OE#
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RP#
NC
WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
48 A16
2
47 BYTE#
3
46 GND
4
45 DQ15/A-1
5
44 DQ7
6
43 DQ14
7
42 DQ6
8
41 DQ13
9
40 DQ5
10
39 DQ12
11
38 DQ4
12
13
M5M29KB/T331AVP
37
36
VCC
DQ11
14
35 DQ3
15
34 DQ10
16
33 DQ2
17
32 DQ9
18
31 DQ1
19
30 DQ8
20
29 DQ0
21
28 OE#
22
27 GND
23
26 CE#
24
25 A0
Outline
20.0 mm
48P3R-C
: VCC
: GND
: Address
: Data I/O
: Chip enable
: Output enable
WE#
WP#
RP#
BYTE#
RY/BY#
NC
: Write enable
: Write protect
: Reset power down
: Byte enable
: Ready/Busy
: Non Connection
1
Rev.1.0_48a_bezz