BB506C_11 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC

BB506C
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
 Built in Biasing Circuit; To reduce using parts cost & PC board space.
 High gain
PG = 24 dB typ. (f = 900 MHz)
 Low noise
NF = 1.4 dB typ. (f = 900 MHz)
 Low output capacitance
Coss = 1.1 pF typ. (f = 1 MHz)
 Provide mini mold packages: CMPAK-4 (SOT-343mod)
Outline
Preliminary Datasheet
R07DS0288EJ0200
(Previous: REJ03G1246-0100)
Rev.2.00
Mar 28, 2011
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Marking is “FS-“.
2. BB506C is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
Channel power dissipation
I_D
Pch^Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 3. Value on the glass epoxy board (50 mm  40 mm  1 mm).
Ratings
6
+6
–0
+6
–0
30
250
150
–55 to +150
(Ta = 25C)
Unit
V
V
V
mA
mW
C
C
R07DS0288EJ0200 Rev.2.00
Mar 28, 2011
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