BB504C Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

BB504C
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
REJ03G0836-0600
(Previous ADE-208-983D)
Rev.6.00
Aug.10.2005
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Marking is “DS–”.
2. BB504C is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.6.00 Aug 10, 2005 page 1 of 9