2SJ546 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ546
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
R_{DS (on)} = 0.075 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
G
123
REJ03G0893-0300
(Previous: ADE-208-638A)
Rev.3.00
Sep 07, 2005
D
1. Gate
2. Drain
3. Source
S
Rev.3.00 Sep 07, 2005 page 1 of 7