2SJ471 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P Channel DV-L MOS FET High Speed Power Switching

2SJ471
Silicon P Channel DV-L MOS FET
Description
High speed power switching
Features
• Low on-resistance
R_{DS (on)} = 25 mΩ typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
REJ03G0865-0200
(Previous: ADE-208-540)
Rev.2.00
Sep 07, 2005
D
123
G
S
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6