MMBTA56 Datasheet, PDF (2/4 Pages) Samsung semiconductor – PNP (DRIVER TRANSISTOR)

RATING AND CHARACTERISTICS CURVES ( MMBTA56 )
300
250
125 ^OC
200
25 ^OC
150
100
-40 ^OC
VCE= 1V
50
0
0.001
1.2
0.01
0.1
1
IC, COLLECTOR CURRENT, (A)
FIG.1 TYPICAL PULSE CURRENT GAIN
vs. COLLECTOR CURRENT
b =10
1.0
-40 ^OC
0.8
25 ^OC
125 ^OC
0.6
0.4
10
100
1000
IC, COLLECTOR CURRENT, (mA)
FIG.3 BASE-EMITTER SATURATION VOLTAGE
vs. COLLECTOR CURRENT
10
1
0.1
0.01
VCB= 80V
0.001
25
50
75
100
125
TA, AMBIENT TEMPERATURE, (^OC)
FIG.5 COLLECTOR-CUTOFF CURRENT
vs. AMBIENT TEMPERATURE
0.8
b =10
0.6
0.4
25 ^OC
0.2
-40 ^OC
125 ^OC
0
10
100
IC, COLLECTOR CURRENT, (A)
FIG.2 COLLECTOR-EMITTER SATURATION
VOLTAGE vs. COLLECTOR CURRENT
1.2
1.0
-40 ^OC
0.8
25 ^OC
0.6
125 ^OC
0.4
0.2
VCE= 1V
0
0.1
1
10
100
1000
IC, COLLECTOR CURRENT, (A)
FIG.4 BASE-EMITTER ON VOLTAGE vs.
10
COLLECTOR CURRENT
TA= 25^OC
8
6
100mA
4
10mA
2 I_C= 1mA
0
3
5
10
20 30 50
IB, BASE CURRENT, (mA)
FIG.6 COLLECTOR SATURATION REGION