MMBTA56 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (DRIVER TRANSISTOR)

MMBTA56
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.225 W(Tamb=25^OC)
* Collector current
ICM :
-0.5 A
* Collector-base voltage
VCBO :
-80 V
* Operating and storage junction temperature range
TJ,Tstg:
-55^OC to +150^OC
MECHANICAL DATA
* ^{Case: Molded plastic}
* ^{Epoxy: UL 94V-O rate flame retardant}
* ^{Lead: MIL-STD-202E method 208C guaranteed}
* ^{Mounting position: Any}
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
Collector - Base Breakdown Voltage (IC=-100 uA, IE =0)
SYMBOL
V(BR)CBO
Collector - Emitter Breakdown Voltage(IC= -1mA, IB=0)
V(BR)CEO
Emitter - Base Breakdown Voltage (IE= -100 uA, IC = 0)
Collector Cut - Off Current (VCB= -80V, IE=0)
Collector Cut - Off Current (VCE= -60V, IB=0)
V(BR)EBO
ICBO
ICEO
DC Current Gain(VCE= -1V, IC= -100mA)
hFE
Collector - Emitter Saturation Voltage(IC= -100 mA, IB= -10mA)
VCE(sat)
Base - Emitter on Voltage(VCE=-1V,IC=-100mA)
Transition Frequency(VCE= -1V, IC= -100mA, f =100MHz)
VBE(on)
fT
Marking
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
-80
-80
-4
-
-
100
-
-
50
2GM
TYP
MAX
UNITS
-
-
V
-
-
V
-
-
V
-
-0.1
-
-0.1
-
-
-
-
-0.25
V
-
-1.2
V
-
-
MHz
2007-3