CMBT2222A Datasheet, PDF (2/3 Pages) Rectron Semiconductor – NPN Silicon Planar Epitaxial Transistors

CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Characteristics (at Tj=25 ^oC unless otherwise specified)
Symbol
Collector cut-off current
I_E = 0; V_CB = 60V
I_E = 0; V_CB = 60V; T_j = 125 ^oC
V_EB = 3 V; V_CE = 60V
Base current
with reverse biased emitter junction
V_FB = 3V; V_CE = 60V
Emitter-base cut-off current
I_C = 0; V_EB = 3 V
Saturation voltage
I_C = 150mA; I_B = 15 mA
I_C = 500mA; I_B = 50 mA
Breakdown voltages
I_C = 1.0mA; I_B = 0
I_C = 100uA; I_E = 0
I_C = 0; I_E = 10uA
I_CBO
I_CBO
I_CEX
I_BEX
I_EBO
V_CEsat
V_BEsat
V_CEsat
V_BEsat
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
D.C. current gain
I_C = 0.1mA; V_CE = 10V
I_C = 1mA; V_CE = 10V
I_C = 10mA; V_CE = 10V
I_C = 10mA; V_CE = 10V; T_amb= -55^oC
h_FE
I_C = 150mA; V_CE = 10V
I_C = 150mA; V_CE = 1V
I_C = 500mA; V_CE = 10V
Transition frequency at f = 100 MH_Z
I_C = 20mA; V_CE = 20V
f_T
Output capacitance at f = 1 MH_Z
I_E = 0; V_CB = 10V
C_O
Input capacitance at f = 1 MH_Z
I_E = 0; V_EB = 0.5V
C_i
Noise figure at R_S = 1K ohm
I_C = 100uA; V_CE = 10V; f= 1kH_Z
F
Value
< 0.01
< 10
< 10
< 20
< 10
< 300
0.6 to 1.2
< 1.0
< 2.0
> 40
> 75
> 6.0
> 35
> 50
> 75
> 35
100 to 300
> 50
> 40
> 300
< 8.0
< 25
< 4.0
UNIT
uA
nA
nA
nA
mV
V
V
V
V
MH_Z
pF
pF
dB
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