CMBT2222A Datasheet, PDF (1/3 Pages) Rectron Semiconductor – NPN Silicon Planar Epitaxial Transistors

CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Absolute Maximum Ratings
Collector-base voltage (open emitter)
Collector-emmitter voltage (open base)
Emmitter base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to
T_amb = 25^oC
D.C. current gain
I_C = 150mA; V_CE = 10V
IC = 500mA; VCE = 10V
Transition frequency at f = 100MH_Z
I_C = 20mA; V_CE = 20V
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
h_FE
f_T
Ratings (at T_A = 25^oC unless otherwise specified)
Limmiting values
Symbol
Collector-base voltage (open emitter)
V_CBO
Collector-emitter voltage (open base)
V_CEO
Emitter-base voltage (open collector)
V_EBO
Collector current (d.c.)
Total power dissipation up to
T_amb = 25^oC
Storge Temperature
Junction Temperature
Thermal Resistance
from junction to Ambient
I_C
P_tot
Tstg
Tj
R_{th j-a}
www.rectron.com
Unit: inch (mm)
Value
max 75
max 40
max 6.0
max 600
max 250
100 to 300
> 40
> 300
UNIT
V
V
V
mA
mW
MH_Z
Value
max 75
max 40
max 6.0
max 600
max 250
-55 to +150
max 150
500
UNIT
V
V
V
mA
mW
o_C
o_C
K/W
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