CD13003 Datasheet, PDF (2/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
*h_FE
**I_C=0.5A, V_CE=5V
I_C=1A, V_CE=5V
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1.5A, I_B=0.5A
I_C=1A, I_B=0.25A,T_c=100ºC
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1A, I_B=0.25A,T_c=100ºC
MIN TYP MAX
11
30
5
25
0.5
1.0
2.5
1.0
1.0
1.2
1.1
UNIT
V
V
V
V
V
V
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
f_T
C_ob
TEST CONDITION
I_C=100mA, V_CE=10V,
f=1MHz
V_CB=10V, f=0.1MHz
MIN TYP MAX
4.0
21
UNIT
MHz
pF
SWITCHING TIME
Turn On Time
Storage Time
Fall Time
t_on
t_stg
t_r
V_CC=125V, I_C=1A, I_B1=0.2A,
I_B2=0.2A
1.1
ms
4.0
ms
0.7
ms
** h_FE Classification:-
Note:- Product is pre selected in DC current
gain (Groups A to F). RECTRON reserves the right
to ship any of the groups according to
production availability.
MARKING
X = Year of Manufacturer Code
Y = Month Code
*Pulse Test:- PW=300ms, Duty Cycle=2%
A
11-16
B
15-19
C
18-22
E
21-25
F
24-30
CD
13003A
XY
CD
13003B
XY
CD
13003C
XY
CD
13003E
XY
CD
13003F
XY