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CD13003 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR
TO126 PLASTIC PACKAGE
NON SILICON POWER TRANSISTOR
CD13003
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ Ta=25 ºC
Derate Above 25ºC
Power Dissipation @ Tc=25 ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
Tj, Tstg
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
45
360
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
Rth (j-c)
Rth (j-a)
TL
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
2.77
89
275
ºC/W
ºC/W
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Voltage
VCBO
IC=1mA, IE=0
Collector Emitter (sus) Voltage
*VCEO(sus)
IC=10mA, IB=0
Collector Cut Off Current
ICBO
VCB=600V, IE=0
Emitter Cut Off Current
VCB=600V, IE=0, Tc=100ºC
IEBO
VEB=9V, IC=0
*Pulse Test: PW=300ms, Duty Cycle=2%
MIN TYP MAX
600
400
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA