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| BC856 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC856
BC857
BC858
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
DESCRIPTION
Collector Cut Off Current
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Knee Voltage
DC Current Gain
SYMBOL TEST CONDITION
ICBO
VCB = 30V, IE = 0
VCB = 30V, IE = 0, Tj = 150oC
VBE(on)*
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
VCE(Sat)
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VBE(Sat)***
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VCEK
IC = 10mA, -IB = Value for which
IC = 11mA at -VCE = 1V
IC = 2mA, VCE = 5V
BC856
hFE
BC857/BC858
BC856A/BC857A/BC858A
Collector Capacitance
Transition Frequency
Small Signal Current Gain
Noise Figure
CC
fT
| hfe |
NF
BC856B/BC857B/BC858B
BC857C/BC858C
IE = ie = 0, VCB = 10V, f = 1MHZ
IC = 10mA, VCB = 5V, f = 100MHZ
IC = 2mA, VCE = 5V, f= 1kHZ
BC856
BC857/BC858
IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200HZ
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
MIN TYP MAX
15
4
0.6
0.75
0.82
0.30
0.65
0.7
0.85
0.60
UNITS
nA
uA
V
V
V
V
125
475
125
800
125
250
220
475
420
800
4.5
100
125
500
125
800
10
pF
MHZ
dB
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