BC856 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors

BC856
BC857
BC858
PNP Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 ^oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (+V_BE = 1V)
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
T_amb = 60 ^oC
Storge Temperature
Junction Temperature
Thermal Resistance
From junction to tab
From tab to soldering points
From soldering points to ambient
SYMBOL
V_CBO
V_CEX
V_CEO
V_EBO
I_C
I_CM
I_EM
I_BM
P_tot**
Tstg
Tj
R_th(j-t)
R_th(t-s)
R_th(s-a)**
BC856
80
80
65
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
BC857
50
50
45
5
100
200
200
200
250
-55 to +150
150
60
280
90
BC858
30
30
30
UNITS
V
V
V
V
mA
mA
mA
mW
o_C
o_C
K/W
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