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FM25CL04_05 Datasheet, PDF (10/12 Pages) Ramtron International Corporation – 4Kb FRAM Serial 3V Memory
AC Parameters (TA = -40° C to + 85° C, CL = 30pF, VDD = 2.7V to 3.65V unless otherwise specified)
Symbol Parameter
Min
Max Units Notes
fCK
SCK Clock Frequency
0
20
MHz
tCH
Clock High Time
22
ns
1
tCL
Clock Low Time
22
ns
1
tCSU
Chip Select Setup
10
ns
tCSH
Chip Select Hold
10
ns
tOD
Output Disable Time
20
ns
2
tODV
Output Data Valid Time
20
ns
tOH
Output Hold Time
0
ns
tD
Deselect Time
60
ns
tR
Data In Rise Time
50
ns
1,3
tF
Data In Fall Time
50
ns
1,3
tSU
Data Setup Time
tH
Data Hold Time
D tHS
/Hold Setup Time
tHH
/Hold Hold Time
E tHZ
/Hold Low to Hi-Z
tLZ
/Hold High to Data Active
D Notes
N S 1. tCH + tCL = 1/fCK.
2. This parameter is characterized but not 100% tested.
3. Rise and fall times measured between 10% and 90% of waveform.
E N Capacitance (TA = 25° C, f=1.0 MHz, VDD = 3.3V)
M IG Symbol
Parameter
CO
Output capacitance (SO)
M S 4 CI
Input capacitance
0 Notes
O E L 1. This parameter is characterized but not 100% tested.
C D 25 Data Retention (VDD = 2.7V to 3.65V)
M Parameter
Min
Max
E F Data Retention
10
-
R W by AC Test Conditions
E Input Pulse Levels
d Input rise and fall times
T N ce Input and output timing levels
10% and 90% of VDD
5 ns
30% and 70% of VDD
5
ns
5
ns
10
ns
10
ns
20
ns
2
20
ns
2
Min
Max
Units Notes
-
8
pF
1
-
6
pF
1
Units
Years
Notes
Equivalent AC Load Circuit
1.3V
NOFOR Repla Output
1100 Ω
30 pF
Rev. 3.1
May 2005
Page 10 of 12