H11AA814 Datasheet, PDF (2/4 Pages) QT Optoelectronics – 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
ELECTRO-OPTICAL CHARACTERISTICS (TA = 25° C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS (Applies to all unless indicated otherwise)
PARAMETER
SYMBOL MIN
TYP
MAX UNITS TEST CONDITIONS
INPUT DIODE
Forward voltage
H11A817
V_F
H11AA814
V_F
Reverse current
1.2
1.5
V
1.2
1.5
V
I_F = 20 mA
I_F = ±20 mA
H11A817
I_R
.001
10
µA
V_R = 5 V
OUTPUT TRANSISTOR
Breakdown voltage
Collector to emitter
Emitter to collector
Collector dark current
Capacitance
BV_CEO
BV_ECO
I_CEO
C_CE
35
100
V
I_C = 1 mA, I_F = 0
6
10
V
I_E = 100 µA, I_F = 0
.025
100
nA
V_CE = 10 V, I_F = 0
8
pF
V_CE = 0 V, f = 1 MHz
TRANSFER CHARACTERISTICS
CHARACTERISTIC
SYMBOL MIN
DC current transfer ratio
H11AA814
CTR
20
H11AA814A
CTR
50
H11A817
CTR
50
H11A817A
CTR
80
H11A817B
CTR
130
H11A817C
CTR
200
H11A817D
CTR
300
Saturation Voltage
Rise time (non saturated)
V_{CE (SAT)}
t_r
Fall time (non saturated)
t_f
ISOLATION CHARACTERISTICS
CHARACTERISTIC
SYMBOL MIN
Steady-state isolation voltage V_ISO
Isolation resistance
R_ISO
Isolation capacitance
C_ISO
5300
10¹¹
TYP
0.1
2.4
2.4
TYP
0.5
MAX UNITS TEST CONDITIONS
300
%
I_F = ±1 mA,V_CE = 5V
150
%
I_F = ±1 mA,V_CE = 5V
600
%
I_F = 5 mA,V_CE = 5V
160
%
260
%
400
%
600
%
0.2
V
I_F = (±)20 mA, I_C = 1 mA
18
µs
I_C = 2 mA, V_CE = 2 V,
R_L = 100 Ω
18
µs
I_C = 2 mA, V_CE = 2 V,
R_L = 100 Ω
MAX
UNITS
V_RMS
Ω
pF
TEST CONDITIONS
1 Minute
V_I-O = 500 VDC
V_I-O = Ø, f = 1 MHz