H11AA814 Datasheet, PDF (1/4 Pages) QT Optoelectronics – 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
PACKAGE DIMENSIONS
.055 (1.40)
.047 (1.20)
4
3
.270 (6.86)
.248 (6.30)
.327
(8.30)
MAX
1
2
.187 (4.75)
.175 (4.45)
.200
(5.10)
MAX
.158 (4.01)
.144 (3.68)
.020 (.51) MIN
.154 (3.90)
.120 (3.05)
.022 (.56)
.015 (.40)
.100 (2.54) TYP
.012 (.30)
.007 (.20)
.300
(7.62)
MIN
.380
(9.64)
MAX
0 to 15°
1
4 COLLECTOR ANODE 1
4 COLLECTOR
2
3 EMITTER CATHODE 2
3 EMITTER
Equivalent Circuit (H11AA814)
Equivalent Circuit (H11A817)
NOTE: ALL DIMENSIONS ARE IN INCHES (mm)
PACKAGE CODE T
DESCRIPTION
The QT Optoelectronics H11AA814 Series consists
of two gallium arsenide infrared emitting diodes, con-
nected in inverse parallel, driving a single silicon
phototransistor in a 4-pin dual in-line package.
The H11A817 Series consists of a gallium arsenide
infrared emitting diode driving a silicon phototransis-
tor in a 4-pin dual in-line package.
FEATURES
s Compact 4-pin package
s Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
APPLICATIONS
H11AA814 Series
s AC line monitor
s Unknown polarity DC sensor
s Telephone line interface
H11A817 Series
s Power supply regulators
s Digital logic inputs
s Microprocessor inputs
s Industrial controls
ABSOLUTE MAXIMUM RATING
TOTAL PACKAGE
Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C
Operating temperature . . . . . . . . . . . . . . . -55° to 100° C
Lead solder temperature . . . . . . . . . . . 260° C for 10 sec
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW
INPUT DIODE
Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW
Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C
Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA
Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A
Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V
OUTPUT TRANSISTOR
Power dissipation (25° C ambient) . . . . .150 mW
Derate linearly (above 25° C) . . . . . .2.0 mW/° C
VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Continuous collector current . . . . . . . . . . 50 mA