CNW82 Datasheet, PDF (2/5 Pages) QT Optoelectronics – WIDE BODY, HIGH ISOLATION OPTOCOUPLERS

WIDE BODY, HIGH ISOLATION
OPTOCOUPLERS
CNW82, CNW83, CNW84, CNW85
ELECTRICAL CHARACTERISTICS (T_A =25°C Unless otherwise specified)
Parameter
Test Conditions Symbol Min
Typ
Max
Unit
EMITTER
Input Forward Voltage
(I_F = 10 mA)
V_F
—
1.20
1.50
V
Reverse Leakage Current
DETECTOR
(CNW82/83)
Collector-Emitter Breakdown Voltage (CNW84/85)
(V_R = 5.0 V)
I_R
—
—
10
µA
50
100
—
(I_C = 1.0 mA) BV_CEO
80
100
—
V
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage (CNW83)
(CNW85)
(I_E = 0.1 mA) BV_ECO
7
10
—
V
70
100
—
(I_C = 0.1 mA) BV_CBO
120
140
—
V
Collector-Emitter Dark Current
(T_A = 25°C)
(T_A = 70°C)
(V_CE = 10 V, I_F = 0)
I_CEO
—
—
1
50
0.1
10
nA
µA
Collector-Base Cut-off Current
(CNW83/85) (V_CB = 10 V, I_F = 0)
I_CBO
—
—
20
nA
COUPLED
Collector-Emitter Saturation Voltage
(I_C = 4 mA, I_F = 10 mA) V_CE(sat)
—
0.15
0.4
V
Isolation Voltage
(DC Value)
(t = 1.0 min.)⁽¹⁾
8.34
—
—
(RMS Value)
(t = 1.0 min.)⁽¹⁾
V_ISO
5.9
—
—
kV
Isolation Resistance
(V_I-O = 500 V)
R_ISO
1
10
—
T!
Isolation Capacitance
(V_I-O = 0, f = 1.0 MHz)
C_ISO
—
0.4
1
pF
(CNW82/83)
Current Transfer Ratio
(CNW84/85)
(I_F = 10 mA, V_CE = 0.4 V)
CTR
0.4
0.8
—
%
(I_F = 10 mA, V_CE = 5 V)
0.63
1.5
3.2
Capacitance
(CNW83/85)
(V_CB = 10 V, f = 1 MHz)
C_CB
—
4.5
—
pF
Turn-on Time
(I_C = 2 mA, V_CC = 5 V, R_L = 100 !)
(I_C = 2 mA, V_CC = 5 V, R_L = 1 k!)
T_ON
—
—
3
—
12
—
µs
Turn-off Time
(I_C = 2 mA, V_CC = 5 V, R_L = 100 !)
(I_C = 2 mA, V_CC = 5 V, R_L = 1 k!)
T_OFF
—
—
3
—
12
—
µs
NOTE:
1. Every product is tested with pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together.
1/18/00 200015A