CNW82 Datasheet, PDF (1/5 Pages) QT Optoelectronics – WIDE BODY, HIGH ISOLATION OPTOCOUPLERS

WIDE BODY, HIGH ISOLATION
OPTOCOUPLERS
DESCRIPTION
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist
of a GaAs infrared emitting diode which is optically coupled to an
NPN phototransistor.
6
The CNW82 and CNW84 do not have the base pin connected for
improved noise immunity.
FEATURES
• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage,
making the device suitable for use with TTL integrated
circuits.
• High degree of AC and DC insulation (5900 V (RMS) and
8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and
detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external
creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)
CNW82
CNW83
1
CNW84
6
CNW85
1
SCHEMATIC
1
NC
6
1
6
2
5
2
5
3
NC
4
CNW82/84
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
3
NC
4
CNW83/85
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
ABSOLUTE MAXIMUM RATINGS
Parameter
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100µs, 120pps)
Reverse Voltage
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
DETECTOR
Collector Current-Continuous
Emitter-Collector Voltage
Collector-Emitter Voltage
(CNW82/CNW83)
(CNW84/CNW85)
Collector-Base Voltage
(CNW83)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
(CNW85)
TOTAL DEVICE
Storage Temperature Range
Ambient Operating Temperature Range
Lead Soldering Temperature
(1/16” from case, 10 sec. duration)
Symbol
I_F
I_F(pk)
V_R
P_D
I_C
V_ECO
V_CEO
V_CBO
P_D
T_stg
T_A
T_L
Value
100
3
5
200
2.0
100
7
50
80
70
120
200
2.0
-55 to 150
-40 to 100
260
Units
mA
A
V
mW
mW/°C
mA
V
V
V
mW
mW/°C
°C
°C
°C
1/18/00 200015A