HYB18L256160BCX-7.5 Datasheet, PDF (41/48 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

HY[B/E]18L256160B[C/F]X-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
Table 19 Electrical Characteristics¹⁾
Parameter
Symbol
Values
Unit Notes
min.
max.
Power Supply Voltage
V_DD
1.70
1.95
V
–
Power Supply Voltage for DQ Output Buffer
V_DDQ
1.70
1.95
V
–
Input high voltage
V_IH
0.8 × V_DDQ
V_DDQ + 0.3
V
2)
Input low voltage
V_IL
-0.3
0.3
V
2)
Output high voltage (I_OH = -0.1 mA)
V_OH
V_DDQ - 0.2
–
V
–
Output low voltage (I_OL = 0.1 mA)
V_OL
–
0.2
V
–
Input leakage current
I_IL
-1.0
1.0
µA
–
Output leakage current
I_OL
-1.5
1.5
µA
–
1) 0 °C ≤ T_C ≤ 70 °C (comm.), -25 °C ≤ T_C ≤ 85 °C (ext.); all voltages referenced to V_SS. V_SS and V_SSQ must be at same potential.
2) V_IH may overshoot to V_DD + 0.8 V for pulse width < 4 ns; V_IL may undershoot to -0.8 V for pulse width < 4 ns.
Pulse width measured at 50% with amplitude measured between peak voltage and DC reference level.
Data Sheet
41
Rev. 1.11, 2007-01
07142005-CR47-RB2E