PYA28C64B Datasheet, PDF (4/11 Pages) Pyramid Semiconductor Corporation – Access Times of 150, 200, 250 and 350ns Software Data Protection

POWER-UP TIMING
Symbol
Parameter
t_PUR
Power-up to Read operation
t_PUW
Power-up to Write operation
PYA28C64B - 8K x 8 EEPROM
Max
Unit
100
µs
5
ms
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V_CC = 5V ± 10%, All Temperature Ranges)⁽²⁾
Sym Parameter
-150
Min Max
-200
Min Max
t_AVAV
t_AVQV
t_ELQV
t_OLQV
t_ELQX
t_EHQZ
t_OLQX
t_OHQZ
t_AVQX
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Chip Disable to to Output in High Z
Output Enable to Output in Low Z
Output Disable to Output in High Z
Output Hold from Address Change
150
200
150
200
150
200
70
80
0
0
50
55
0
0
50
55
0
0
-250
Min Max
250
250
250
100
0
60
0
60
0
-350
Unit
Min Max
350
ns
350 ns
350 ns
100 ns
0
ns
70 ns
0
ns
70 ns
0
ns
TIMING WAVEFORM OF READ CYCLE
Document # EEPROM111 REV 02
Page 4