PY291A Datasheet, PDF (2/9 Pages) Pyramid Semiconductor Corporation – 2K X 8 REPROGRAMMABLE PROM

PY291A
MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
V_CC
Power Supply Pin with
Respect to GND
V
TERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
V_PP
Program Voltage
Value Unit
–0.5 to +7 V
–0.5 to
V +0.5 V
CC
13
V
RECOMMENDED OPERATING CONDITIONS
Grade⁽²⁾
Commercial
Ambient Temp
0°C to 70°C
Gnd Vcc
0V 5.0V ±10%
Military
-55°C to +125°C 0V 5.0V ±10%
Symbol Parameter
T
A
T
BIAS
Operating Temperature
Temperature Under
Bias
T_STG
Storage Temperature
P_T
Power Dissipation
I
DC Output Current
OUT
Value Unit
–55 to +125 °C
–55 to +125 °C
–65 to +150 °C
1.0
W
50
mA
CAPACITANCES⁽⁴⁾
(V_CC = 5.0V, T_A = 25°C, f = 1.0MHz)
Symbol Parameter
Conditions Typ. Unit
C_IN
C_OUT
Input Capacitance V_IN = 0V
Output Capacitance V_OUT= 0V
10 pF
10 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage⁽²⁾
Symbol
Parameter
Test Conditions
V_IH
V_IL
V_HC
V_LC
V_OL
V_OH
I
LI
I_LO
V_PP
I_PP
V_IHP
V_ILP
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Output Low Voltage (TTL Load) I_OL = +16 mA, V_CC = Min.
Output High Voltage (TTL Load)
Input Leakage Current
Output Leakage Current
Programming Supply Voltage
I_OH = –4 mA, V_CC = Min.
V_CC = Max.
V_IN = GND to V_CC
V_CC = Max., CE = V_IH,
V_OUT = GND to V_CC
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
PY291A
Unit
Min
Max
2.0
V_CC
V
–0.5⁽³⁾
0.8
V
V_CC –0.2 V_CC +0.5 _V
–0.5⁽³⁾
0.2
V
0.4
V
2.4
V
–10
+10 µA
–10
+10 µA
12
13
V
50 mA
3.0
V
0.4
V
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature Range
Commercial
I_CC
Dynamic Operating Current*
Military
–20 –25 –35 –50 Unit
120 90 90 90
mA
N/A N/A 90 90
mA
Document # EPROM101 REV OR
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