PYA28C010 Datasheet, PDF (1/15 Pages) Pyramid Semiconductor Corporation – Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply

FEATURES
Access Times of 120, 150, 200, and 250ns
Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS:
- 60 mA Active Current
- 500 µA Standby Current
Fast Write Cycle Times
PYA28C010
128K x 8 EEPROM
Software Data Protection
Fully TTL Compatible Inputs and Outputs
Endurance:
- 10,000 Cycles/byte
- 100,000 Cycles/page
Data Retention: 100 Years
Available in the following package:
– 32-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
– 32-Pin Solder Seal Flatpack
– 44-Pin Ceramic LCC (650x650 mils)
DESCRIPTION
The PYA28C010 is a 5 Volt 128Kx8 EEPROM using float-
ing gate CMOS Technology. The device supports 64-byte
page write operation. The PYA28C010 features DATA and
Toggle Bit Polling as well as a system software scheme
used to indicate early completion of a Write Cycle. The
device also includes user-optional software data protection.
Data Retention is 100 Years. The device is available in
a 32-Pin 600 mil wide Ceramic DIP, 32-Pin LCC, 32-Pin
Solder Seal Flatpack and 44-Pin Ceramic LCC.
Functional Block Diagram
Pin Configuration
Document # EEPROM103 REV 03
DIP (C10)
LCC (L6)
Revised July 2014