PE99153DIE Datasheet, PDF (2/15 Pages) Peregrine Semiconductor – Hi-Rel 6A DC-DC Converter

PE99153 DIE
Product Specification
Table 2. Electrical Specifications¹
Temp (T_A) = –55 °C to +125 °C, V_IN = 4.6–6.0V, V_OUT = 1.0–3.6V, unless otherwise noted
Parameter
Condition
Min
Typ
Max Unit
Synchronous Frequency Range,
Fsw_range
0.1
5
MHz
Maximum Cycle-Averaged RMS
Output Current, Imax
6
A
Supply Current (Shutdown), IDDSD
Supply Current (No-load, 1 MHz
async), IDD0
SDb = GND, V_IN = 5.5V
SDb = GND, V_IN = 6.0V
2
6
mA
0
9.5
mA
55
mA
High Side On Resistance, Ron,hss Test current = 100 mA
50
105
mΩ
Low Side On Resistance, Ron,lss
Test current = 100 mA
50
110
mΩ
Output Voltage
Reference Voltage Accuracy, Vref ²
V_IN = 5.0V, I_OUT = Imax/2, –40≤ T_A ≤ +85 °C, Fsw = 100 kHz–1 MHz
–1.00
0
V_IN = 5.0V, I_OUT = Imax/2, –55≤ T_A ≤ +125 °C, Fsw = 100 kHz–1 MHz –1.50
0
Reference Voltage Line Regulation,
Kvi (steady state)²
4.6V ≤ V_IN ≤ 6.0V, I_OUT = 3A, V_OUT = 2.5V, Fsw = 1 MHz
–0.20
0
1.00
%
1.50
%
0.20
%
Reference Voltage Load Regulation,
Kvo (steady state)²
V_IN = 5.0V, 500 mA ≤ I_OUT ≤ 3A, V_OUT = 2.5V, Fsw = 1 MHz
–0.25
0
0.25
%
Internal Oscillator and SYNC Capture
Internal Oscillator Frequency,
FOSC_FREQ
Internal Oscillator Duty Cycle,
FOSC_DC
SYNC = GND
SYNC = Open or V_IN
336
550
0.740 1.10
46
690
kHz
1.31 MHz
54
%
Min SYNC Lock Capture Frequency,
Sync_lock
40
kHz
External Sync Duty Cycle, SYNC_DC
40
60
%
Current Limiting and Current Mode Control Loop
Internal Current Limit Max, ILIMXINT ²
VOUT = 1.0V, ISET = 3.0V, ICOMP = 0V, RSEL pin shorted to ground,
not min-on-time limited & Fsw = 500 kHz
6
8
9.5
A
Externally Set Max Current Limit
Accuracy, ILIMXEXT ²
VOUT = 1.0V, RSET = 82Ω, ISET = 3.0V, ICOMP = 0V, RSEL = V_IN,
not min-on-time limited. Fsw = 500 kHz
6
8
9.5
A
Maximum voltage across R_SET,
VMAXRSET
I_out/I_rset, G_Iref ²
ICOMP cap, CICOMP ²
I_OUT set for 50% rated current
1.35
1.55
1.80
V
350
450
110
550
A/A
pF
Current compensation gain, ICOMP
gain, G_ICOMP ²
4.3
6.5
8.7
A/V
Notes: 1. Wafer level screening is performed at +25 °C and +85 °C only. However, performance is guaranteed over the full operating temperature range based on
a population of parts that were packaged and characterized at –55 °C and +125 °C.
2. Parameter not tested at wafer level due to high current limitations of test setup.
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