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PSII3X10 Datasheet, PDF (5/5 Pages) Powersem GmbH – IGBT Module
◁
PSII 3x10/06
Diode
30
A
25
IF 20
15
TVJ=150°C
TVJ=100°C
TVJ= 25°C
10
5
1.4
nC
1.2
TVJ= 100°C
VR = 300V
Qr 1.0
0.8
0.6
IF= 20A
IF= 10A
IF= 5A
0.4
0.2
40
TVJ= 100°C
A VR = 300V
IRM 30
IF= 20A
20
IF= 10A
IF= 5A
10
0
0.0 0.5 1.0 1.5 2.0 V 2.5
VF
Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.0
100
A/µs 1000
-diF/dt
Reverse recovery charge Qr
versus -diF/dt
120
ns
110
trr
100
90
TVJ= 100°C
VR = 300V
IF= 20A
IF= 10A
IF= 5A
0
0 200 400 600 A8/0µ0s
-diF/dt
Peak reverse current IRM
versus -diF/dt
1000
20
1.2
V
VFR
tfr
15
VFR
µs
0.9
tfr
10
0.6
0.5
Qr
0.0
0
40
80 120 °C 160
TVJ
Dynamic parameters Qr, IRM
versus TVJ
80
70
0 200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
5
0.3
TVJ= 100°C
IF = 10A
0
8-06A 0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Peak forward voltage VFR and tfr
versus diF/dt
0.00001 0.0001 0.001
0.01 t(s) 0.1
1
Transient thermal resistance junction to heatsink
10 (ZthJH is measured using 50 µm
thermal grease)
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
1
Fred
ZthJH[K/W]
0.1
0.01
0.001
10
100
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20